- 您现在的位置：买卖IC网 > Sheet目录135 > MBRB40250TG (ON Semiconductor)DIODE SCHOTTKY 40A 250V D2PAK-3
     MBR40250, MBR40250T, MBRF40250T, MBRB40250T http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 250 V Average Rectified Forward Current (Rated VR) TC = 82 °C MBR40250, MBR40250T, MBRB40250T (Rated VR) TC = 46 °C MBRF40250T IF(AV) 40 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 82 °C MBR40250, MBR40250T, MBRB40250T (Rated VR, Square Wave, 20 kHz) TC = 46 °C MBRF40250T IFRM 80 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Storage Temperature Tstg 65 to +175 °C Operating Junction Temperature TJ 65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance Junction?to?Case MBR40250(T) and MBRB40250T MBRF40250 Junction?to?Ambient MBR40250(T) MBRF40250 MBRB40250T RJC RJA 2.0 3.0 60 50 50 °C/W ELECTRICAL CHARACTERISTICS Rating Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) IF = 20 A, T C = 25 °C IF = 20 A, T C = 125 °C IF = 40 A, T C = 25 °C IF = 40 A, T C = 125 °C VF 0.86 0.71 0.97 0.86 V Maximum Instantaneous Reverse Current (Note 1) Rated DC Voltage, TC = 25 °C Rated DC Voltage, TC = 125 °C IR 0.25 30 mA Maximum Reverse Recovery Time IF = 1.0 A, di/dt = 50 A/ s, TC = 25 °C trr 35 ns DYNAMIC CHARACTERISTICS Capacitance VR = ?5.0 V, TC = 25 °C, Frequency = 1.0 MHz CT 500 pF 1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%. |